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| Shantou Huashan Electronic Devices Co.,Ltd. HBTA12A60 INNER INSULATED TYPE TRIAC ( II TO - 220 PACKAGE) Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=12A) * High Commutation dv/dt General Description The Triac HBTA8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings=25ae(c) Ta Operating T stg Storage Temperature----------------------- - 40~125ae Tj Junction Temperature -------------------- 40~125ae PGMPeak Gate Power Dissipation---------------------- 5W VDRM Repetitive Peak Off-State Voltage--------------------600V IT RMS(c) .M.S On-State Current R Ta=79ae(c) ------------------ 12A VG M Peak Gate Voltage ---------------------10V I G M P e a k G a t e C u r r e n t - - - - - - - - - - - - - - - - - - - - 2.0A ITSMSurge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)--- -119/130A VISO RMS Isolation Breakdown Voltage---- - ------------2500V Electrical Characteristics=25ae Ta (c) Items Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Currentn(c) Gate Trigger Currento(c) Gate Trigger Currento(c) Gate Trigger Voltagen(c) Gate Trigger Voltageo(c) Gate Trigger Voltageo(c) Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Thermal Resistance Holding Current 0.2 10 3.3 20 Min. Max. 2.0 1.4 30 30 30 1.5 1.5 1.5 Unit mA V mA mA mA V V V V V/S ae /W mA Conditions VD=VDRM, Single Phase,Half Wave, TJ=125ae IT=12A, Inst. Measurement VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm T J=125ae D =1/2VDRM ,V TJ=125ae ,VD=2/3VDRM (di/dt)c=-4.0A/ms Junction to case Symbol IDRM VTM I+GT1 I- GT1 I-GT3 V+ GT1 V- GT1 V- GT3 VGD (dv/dt)c Rth(j-c) IH Shantou Huashan Electronic Devices Co.,Ltd. HBTA12A60 Performance Curves Shantou Huashan Electronic Devices Co.,Ltd. HBTA12A60 |
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